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| STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmeshTM Power MOSFET General features Type STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45 <0.45 <0.45 <0.45 ID 3 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 3 12 D2PAK i2PAK Description The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Internal schematic diagram Applications Switching application Order codes Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP Marking B11NM60 B11NM60-1 P11NM60 P11NM60FP Package DPAK IPAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube January 2007 Rev 6 1/16 www.st.com 16 Contents STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical ratings 1 Electrical ratings Table 1. Symbol VGS ID ID IDM(2) PTOT dv/dt(3) VISO TJ Tstg Absolute maximum ratings Value Parameter TO-220/DPAK/IPAK TO-220FP Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature --65 to 150 150 11 7 44 160 1.28 15 2500 30 11 (1) Unit V A A A W W/C V/ns V C C 7(1) 44(1) 35 0.28 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 11A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX. Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220/DPAK/IPAK Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 0.78 62.5 300 TO-220FP 3.57 C/W C/W C Unit Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 5.5 350 Unit A mJ 3/16 Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = 600 V VDS = 600 V, Tc=125C VGS = 30V VDS= VGS, ID = 250A VGS= 10V, ID= 5.5A 3 4 0.4 Min. 600 1 10 100 Typ. Max. Unit V A A nA V 5 0.45 Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq (2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Test conditions VDS > ID(on) x RDS(on)max, ID = 5.5A Min. Typ. 5.2 1000 230 25 100 Max. Unit S pF pF pF pF VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 480V f=1 MHz gate DC bias = 0 Test signal level = 20mV open drain VDD=480V, ID = 11A VGS =10V (see Figure 15) RG Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge 1.6 30 10 15 nC nC nC 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical characteristics Table 6. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD=300 V, ID=5.5A, RG=4.7, VGS=10V (see Figure 17) VDD=480V, ID=11A, RG=4.7, VGS=10V (see Figure 17) Min. Typ. 20 20 6 11 19 Max. Unit ns ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11A, VGS=0 ISD=11A, di/dt = 100A/s, VDD=100V, Tj=25C (see Figure 16) ISD=11A, di/dt = 100A/s, VDD=100V, Tj=150C (see Figure 16) 390 3.8 19.5 Test conditions Min Typ. Max 11 44 1.5 Unit A A V ns C A Reverse recovery time Reverse recovery charge Reverse recovery current 570 5.7 20 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/16 Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220/D2PAK/I2PAK Figure 2. Thermal impedance TO-220 / D2PAK/I2PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 8/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/16 Package mechanical data STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/16 Package mechanical data STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/16 G STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/16 Packaging mechanical data STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Revision history 6 Revision history Table 8. Date 09-Sep-2004 10-Jun-2005 26-Jul-2006 31-Aug-2006 21-Dec-2006 12-Jan-2007 Revision history Revision 1 2 3 4 5 6 First Release Typing error, wrong description The document has been reformatted, no content change Typo mistake on order code Various changes on "Test conditions" for Table 5. and Table 6. Order code has been corrected Changes 15/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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